Magneto‐optical Kerr effect of rf‐sputtered PtMnSb thin films
Magneto‐optical Kerr effect of rf‐sputtered PtMnSb thin films
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射频溅射 PtMnSb 薄膜的磁光克尔效应
DOI：
10.1063/1.337948
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发表时间：
1987
影响因子：
3.2
通讯作者：
K. Matsubara
中科院分区：
文献类型：
--
作者：
R. Ohyama;T. Koyanagi;K. Matsubara
研究了射频溅射和退火制备的C1b相Heusler合金PtMnSb薄膜，以评估该化合物的高磁光Kerr效应。PtMnSb薄膜在500℃退火后的室温饱和磁化强度（Ms）和矫顽力（Hc）分别约为400 emu/cm3和110 Oe。所有薄膜的易磁化轴均平行于薄膜平面。C1b相PtMnSb薄膜在垂直于薄膜平面的5‐kOe外磁场作用下，其极性克尔旋转θK在710‐nm波长处的最大值超过1.8°。本文还研究了PtMnSb与等电子化合物NiMnSb的混合物，即Ni取代Pt的薄膜。θK峰呈现红移，而含有过量Pt浓度的PtMnSb则呈现蓝移。随着膜中Ni浓度的增加，强度显著降低。
Thin films of the C1b‐phase Heusler alloy PtMnSb, prepared by rf sputtering and subsequent annealing, have been studied in order to assess the high magneto‐optical Kerr effect of this compound. The room‐temperature saturation magnetization (Ms) and coercive force (Hc) for PtMnSb thin films after being annealed at 500 °C were about 400 emu/cm3 and 110 Oe, respectively. The easy axis of magnetization was parallel to the film plane for all films. The polar Kerr rotation θK for the PtMnSb films with a C1b phase has a maximum value in excess of 1.8° at 710‐nm wavelength in a 5‐kOe external magnetic field perpendicular to the film plane. Thin films substituted with Ni for Pt, which are an admixture of PtMnSb and an isoelectronic compound NiMnSb, are also examined. The θK peak showed a red shift, in contrast with PtMnSb containing excess Pt concentration, where a blue shift was observed. The intensity reduced significantly with increasing Ni concentration in the films.