Development of active and slim edge terminations for 3D and planar detectors
Development of active and slim edge terminations for 3D and planar detectors
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开发用于 3D 和平面探测器的有源薄边缘终端
DOI：
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发表时间：
2011
期刊：
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通讯作者：
N. Zorzi
中科院分区：
文献类型：
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作者：
G. Dalla Betta;A. Bagolini;M. Boscardin;G. Giacomini;M. Povoli;E. Vianello;N. Zorzi
我们报告了硅探测器边缘终止的新解决方案。在一个项目的框架内，旨在优化的3D探测器与主动边缘，我们已经开发了两个主动边缘使用单面工艺与支持晶圆，和超薄边缘使用双面工艺没有支持晶圆。TCAD模拟和实验测试已经进行了验证和比较所提出的方法。虽然有源边缘可以在距离物理边缘几微米的范围内提供更好的灵敏度，但薄边缘可以简化制造技术，同时将边缘处的死区限制在约50 µm。本文报道的主要设计和技术问题，沿着从TCAD模拟和电光测试这些设备上进行的选择结果。
We report novel solutions for the edge termination in silicon detectors. In the framework of a project aimed at the optimization of 3D detectors with active edge, we have developed both active edges using a single sided process with support wafer, and slim edges using a double sided process without support wafer. TCAD simulations and experimental tests have been carried out to validate and compare the proposed approaches. While active edges can provide a better sensitivity up to a few microns from the physical edge, slim edges can simplify the fabrication technology while limiting the dead area at the edge to about 50 µm. The main design and technological issues are reported in this paper, along with selected results from TCAD simulations and electro-optical tests performed on these devices.