Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication
Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication
复制标题
使用双层薄膜增强场发射体阵列制造中的离子诱导弯曲现象
DOI：
10.1116/1.3276096
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
S. Kanemaru
中科院分区：
文献类型：
--
作者：
Tomoya Yoshida;M. Nagao;S. Kanemaru
提出了一种基于离子诱导弯曲（IIB）现象的场致发射体阵列的简单制作方法。这种技术是一个非常简单的两步过程，包括形成悬臂和随后的离子辐照。然而，为了形成具有实际离子剂量的垂直薄膜发射器，只能使用具有有限厚度的少数特定膜材料。因此，IIB现象的增强方法是必要的。为了增强IIB现象，作者提出了双层膜方法。结果发现，离子诱导的弯曲效应可以通过使用双层膜方法极大地增强。因此，在悬臂膜使用重元素的情况下，所需剂量可以降低到小于5× 1015 cm-2。这种方法增加了离子诱导弯曲的潜力，作为FEA器件结构的简单制造技术。
The authors proposed a simple fabrication technique of field emitter array based on a ion-induced bending (IIB) phenomenon. This technique is a very simple two-step process, involving the formation of a cantilever and subsequent ion irradiation. To form a vertical thin film emitter with practical ion dose, however, only a few specific film materials with limited thickness can be used. Therefore, an enhancement method of the IIB phenomenon is necessary. To enhance the IIB phenomenon, the authors proposed the double-layered film method. It was found that the ion-induced bending effect could be extremely enhanced by using a double-layered film method. The required dose could consequently be decreased to less than 5×1015cm−2 in the case of using a heavy element for the cantilever film. This methodology increases the potential of ion-induced bending as a simple fabrication technique for FEA device structures.