Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy
Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy
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DOI：
10.1002/pssa.201000598
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发表时间：
2011-02-01
影响因子：
2
通讯作者：
Fujiwara, Yasufumi
中科院分区：
文献类型：
--
作者：
Furukawa, Naoki;Nishikawa, Atsushi;Fujiwara, Yasufumi
研究了金属有机气相外延(OMVPE)生长的掺Eu GaN(GaN：Eu)在常压(100kPa)和低气压(10kpa)下的发光特性。尽管常压GaN：Eu(AP-GaN：Eu)的Eu浓度低于低压GaN：Eu(Lp-GaN：Eu)，但AP-GaN：Eu的积分光致发光(PL)强度是Lp-GaN：Eu的10倍(A.Nishikawa等，Appl.太棒了。让我们来吧。97,051113(2010年))。与Lp-GaN：Eu相比，AP-GaN：Eu具有更高的晶体质量，从而提高了GaN基质材料向Eu离子的能量转移效率，增加了光学活性Eu离子的数目。(C)2011年威利-VCH Verlag有限公司，温海姆KGaA
We investigated the luminescence properties of the Eu-doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN: Eu (AP-GaN:Eu) is lower than that of low pressure GaN: Eu (LP-GaN:Eu), the integrated photoluminescence (PL) intensity of the AP-GaN: Eu was 10 times higher than that of the LP-GaN: Eu (A. Nishikawa et al., Appl. Phys. Lett. 97, 051113 (2010)). Temperature dependent PL and time-resolved PL measurements revealed that the improved PL intensity was attributed to the higher crystal quality of the AP-GaN:Eu compared to that of the LP-GaN:Eu, which resulted in the enhancement of the energy transfer efficiency from the GaN host material to the Eu ions and in the increase in the number of optically active Eu ions. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim