Bias-assisted photoelectrochemical oxidation of n-GaN in H2O
Bias-assisted photoelectrochemical oxidation of n-GaN in H2O
复制标题
H2O 中 n-GaN 的偏压辅助光电化学氧化
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
H. J. Lee
中科院分区：
文献类型：
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作者：
J. Seo;C. S. Oh;Hyunjin Jeong;J. Yang;K. Lim;Chang;H. J. Lee
Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results.
