A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices
A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices
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DOI：
10.1109/tpel.2018.2845538
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发表时间：
2019-03
影响因子：
6.7
通讯作者：
A. B. Jørgensen;S. Bęczkowski;C. Uhrenfeldt;N. H. Petersen;S. Jørgensen;S. Munk‐Nielsen
中科院分区：
文献类型：
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作者：
A. B. Jørgensen;S. Bęczkowski;C. Uhrenfeldt;N. H. Petersen;S. Jørgensen;S. Munk‐Nielsen
需要新的封装解决方案和功率模块结构来充分利用新兴的市售宽带隙半导体器件的益处。传统的几千瓦功率级封装解决方案体积庞大，这意味着重要的栅极驱动器和测量电路没有正确集成。本文提出了一种基于氮化镓增强型高电子迁移率晶体管的快速开关集成功率模块，与其他混合结构相比，该结构易于制造。给出了该功率模块的结构，讨论了其栅极驱动电路和版图结构的设计。使用COMSOL Multiphysics对所设计的功率模块的热特性进行了评估。ANSYS Q3 D Extractor用于提取所设计功率模块的寄生效应，并包含在各种复杂度的仿真模型中。仿真模型包括氮化镓器件的SPICE模型，元件的寄生效应通过实验表征，最高可达2 GHz。最后，对所设计的功率模块进行了实验测试，其开关特性与仿真模型的结果一致。实验结果表明，实现的最大开关瞬态为64 V/ns，并验证了2.65 nH的电源回路电感。
New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancement-mode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.