Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
复制标题
升华生长六方多型碳化硅单晶中基面滑移和混合倾斜边界的形成
DOI：
10.1063/1.1484229
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
M. Dudley
中科院分区：
文献类型：
--
作者：
S. Ha;M. Skowronski;W. Vetter;M. Dudley
采用光学显微镜、同步辐射白色束X射线形貌术（SWBXT）和高分辨X射线衍射（HRXRD）研究了物理气相输运法生长的4H碳化硅单晶中基面位错的分布。在KOH蚀刻的切边晶片的硅表面上观察到蚀刻坑阵列。将阵列彼此平行并垂直于切去方向对齐。蚀坑呈椭圆形，这是基面位错的特征。相应的阵列图像已被SWBXT观察到。根据腐蚀坑阵列的特征分布，将其解释为生长过程中高温变形的滑移痕迹。热弹性应力被认为是变形的合理原因。此外，在退火的穿透刃型位错阵列附近发现了基面位错堆积。用SWBXT和HRXRD研究了与这种位错结构有关的取向差。
Optical microscopy, synchrotron white beam x-ray topography (SWBXT), and high resolution x-ray diffraction (HRXRD) were used to study the distribution of basal plane dislocations in bulk 4H silicon carbide crystals grown by the physical vapor transport method. An etch pit array was observed on the silicon face of KOH-etched off-cut wafers. The arrays were aligned parallel to each other and perpendicular to the off-cut direction. The etch pits were oval-shaped, which is characteristic of basal plane dislocations. Corresponding array images have been observed by SWBXT. Based on the characteristic distribution, the etch pit arrays are interpreted as the slip traces of high temperature deformation during the growth process. Thermoelastic stress is proposed as the plausible cause of the deformation. In addition, basal plane dislocation pileups were found in the proximity of polygonized threading edge dislocation arrays. SWBXT and HRXRD were used to study the misorientation related to such dislocation structure...