Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor
Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor
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DOI：
10.1016/s0925-4005(02)00003-5
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发表时间：
2002-04-30
影响因子：
8.4
通讯作者：
Lollman, DBB
中科院分区：
文献类型：
--
作者：
Aguir, K;Lemire, C;Lollman, DBB
研究了通过射频反应磁控溅射系统从金属钨靶材和氩氧混合气体在 SiO2/Si 基底上沉积的金属氧化物半导体（例如三氧化钨 (WO3) 薄膜）的电性能。本研究致力于分析WO3气体传感器的电性能与沉积参数（基板温度、氧分压、退火）之间的关系以及这些WO3气体传感器的灵敏度和稳定性。通过原子力光谱（AFM）研究了这些薄膜的表面形貌演变。进行了两种类型的电气测量：电导率与温度的关系以及不同温度下臭氧下的一些测试。活化能的演化与表面传感器在氧分压下的反应性相关。 (C) 2002 Elsevier Science B.V. 保留所有权利。
Electrical properties of the metallic oxide semiconductor, such as tungsten trioxide (WO3) thin films, deposited on SiO2/Si substrates by RF reactive magnetron sputtering system from a metallic tungsten target and argon-oxygen mixture gas have been investigated. This study is devoted to analyse the relationship between the electrical properties and the WO3 thin film deposition parameters (substrate temperature, oxygen partial pressure, annealing) and the sensitivity and stability of these WO3 gas sensors. The surface morphology evolution of these films has been investigated by atomic force spectroscopy (AFM). Two types of electrical measurements were performed: conductivity versus temperature and some tests under ozone at different temperatures. The activation energy evolution is correlated with the reactivity of surface sensors under oxygen partial pressure. (C) 2002 Elsevier Science B.V. All rights reserved.