Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF‐STEM
Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF‐STEM
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DOI：
10.1002/sia.2960
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发表时间：
2008-12
影响因子：
1.7
通讯作者：
H. Okuno;M. Takeguchi;K. Mitsuishi;Y. Irokawa;Y. Sakuma;K. Furuya
中科院分区：
文献类型：
--
作者：
H. Okuno;M. Takeguchi;K. Mitsuishi;Y. Irokawa;Y. Sakuma;K. Furuya
使用电子显微镜进行局部表征的四元III族氮化物材料AlInGaN。分别通过能量色散X射线光谱和扫描透射电子显微镜分析以及高分辨率透射电子显微镜成像的组合来估计样品的化学组成和晶格参数。这些结果与西姆斯测量的本体样品的标称成分吻合良好，误差仅为百分之几，表明这些技术用于这种异质结构材料的局部表征的有效性。版权所有© 2008约翰威利父子有限公司。
Local characterizations of a quaternary group III nitride material AlInGaN were carried out using electron microscopy. The chemical composition and the lattice parameter of the sample were estimated by a combination of energy dispersive X‐ray spectroscopy and scanning transmission electron microscopy analyses and high‐resolution transmission electron microscopy imaging, respectively. These results correspond well with the nominal composition of bulk sample measured by SIMS with only a few percent of error, indicating the validity of these techniques for the local characterization on this kind of hetero‐structural materials. Copyright © 2008 John Wiley & Sons, Ltd.