Ungrounded Coplanar Waveguide Based Straight Line Methods for Broadband and Continuous Dielectric Characterization of Microwave Substrates
Ungrounded Coplanar Waveguide Based Straight Line Methods for Broadband and Continuous Dielectric Characterization of Microwave Substrates
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基于直线法的不接地共面波导微波基底的宽带和连续介电特性表征
DOI：
10.1109/access.2020.2972039
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发表时间：
2020
期刊：
影响因子：
3.9
通讯作者：
Hong Wei
中科院分区：
文献类型：
--
作者：
Cai Longzhu;Jiang Zhi Hao;Huang Yan;Hong Wei
提出了一种基于含有两条简单直线的不接地共面波导(UGCPW)结构的微波基片宽带和连续介电特性的快速表征方法。该方法可以在一定程度上缓解连接器焊接和器件制造带来的推导误差。为了验证这一点，进行了理论分析和结果比较。通过综合考虑导体损耗和辐射损耗，可以较高精度地反演出介质损耗正切。在12~20 GHz频率范围内，测量的介电常数和介质损耗正切的误差分别在0.03(0.68%，4.37vs4.40)和0.0013(6.5%，0.0213 vs0.02)以内，比文献报道的结果更准确，同时所提出的提取方法比波级联矩阵算法等其他方法更简单。由于UGCPW的结构，该方法适用于新兴的合成介质材料的性能评估，因为器件设计需要一轮电镀工艺，可以消除多次电镀工艺可能导致的导体厚度和粗糙度的一致性误差。
This work presents a novel method for fast characterization of broadband and continuous dielectric properties of microwave substrates based on an ungrounded coplanar waveguide (UGCPW) structure containing two simple straight lines. The proposed method could, to some extent, alleviate the derivation error due to connector soldering and device fabrication. To verify this point, theoretical analysis and result comparisons are carried out. By considering both the conductor loss and radiation loss, the dielectric loss tangent can be retrieved with a high precision. The deviation of the measured dielectric constant and dielectric loss tangent are found to be within 0.03 (0.68%, 4.37 vs 4.40) and 0.0013 (6.5%, 0.0213 vs 0.02), respectively, in the range from 12 to 20 GHz, which is more accurate than the results reported in the literature, all while the proposed extraction approach is simpler than other methods such as the wave cascading matrix (WCM) algorithm. Due to the UGCPW configuration, this method is suitable for property evaluation of emerging synthesized dielectric materials, as a single round of electroplating process is required for device design, which can eliminate possible consistency error in conductor thickness and roughness caused by multiple electroplating process.