Efficient Spin Detection Across the Hybrid Co/GaAs Schottky Interface
Efficient Spin Detection Across the Hybrid Co/GaAs Schottky Interface
复制标题
通过混合 Co/GaAs 肖特基接口进行高效自旋检测
DOI：
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发表时间：
2007
影响因子：
2.1
通讯作者：
J. Bland
中科院分区：
文献类型：
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作者：
T. Trypiniotis;D. Tse;S. J. Steinmuller;W. Cho;J. Bland
利用光激发技术研究了Co/GaAs结构的电子自旋探测效率。制备两组样品，其中在第一组样品生长之前通过退火对衬底表面进行预处理，而第二组样品不进行退火处理。虽然，在退火的样品中，观察到自旋检测，nonannealed的情况下，没有自旋依赖的输运效应。这归因于没有肖特基隧道势垒来促进穿过界面的隧穿，作为负责自旋过滤的传输机制。此外，它说明了界面质量的影响，自旋相关的输运过程的一般情况下，任何FM电极
The electron spin detection efficiency was studied across Co/GaAs structures using photoexcitation techniques. Two sets of samples were prepared where the substrate surface was pretreated by annealing prior to growth for the first set whereas for the second no annealing treatment was carried out. While, in the annealed sample, spin detection was observed, the nonannealed case showed no spin-dependent transport effects. This is attributed to the absence of a Schottky tunnel barrier to facilitate tunnelling through the interface, as the transport mechanism responsible for the spin filtering. Furthermore, it illustrates the influence of the interface quality on spin dependent transport processes for the general case of any FM electrode