Photoluminescence from SiO 2 films containing Si nanocrystals and Er: Effects of nanocrystalline size on the photoluminescence efficiency of Er
Photoluminescence from SiO 2 films containing Si nanocrystals and Er: Effects of nanocrystalline size on the photoluminescence efficiency of Er
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含有 Si 纳米晶和 Er 的 SiO 2 薄膜的光致发光：纳米晶尺寸对 Er 光致发光效率的影响
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
Keiichi Yamamoto
中科院分区：
文献类型：
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作者：
M. Fujii;Masato Yoshida;Keiichi Yamamoto
含有硅纳米晶体的 SiO2 薄膜 ~nc-Si！和 Er 被制备并且它们的光致发光〜PL！性质进行了研究。样品在 0.8 和 1.54 mm 处表现出 PL 峰，这可以分别归因于 nc-Si 中的电子-空穴复合和 Er 中的 4f 内跃迁。研究了两个 PL 峰强度之间的相关性，作为 nc-Si 尺寸、Er 浓度、激发功率和激发波长的函数。研究发现，通过在薄膜中加入 nc-Si，Er 的 1.54mm PL 得到了显着增强。此外，发现 1.54mm 峰的强度很大程度上取决于所掺入的 nc-Si 的尺寸。 © 1998 美国物理研究所。 @S0021-8979 ~98!06320-8#
SiO2 films containing Si nanocrystals ~nc-Si! and Er were prepared and their photoluminescence ~PL! properties were studied. The samples exhibited PL peaks at 0.8 and 1.54 mm, which could be assigned to the electron-hole recombination in nc-Si and the intra-4 f transition in Er , respectively. Correlation between the intensities of the two PL peaks was studied as functions of the size of nc-Si, Er concentration, excitation power and excitation wavelength. It was found that the 1.54mm PL of Er is strongly enhanced by incorporating nc-Si in films. Furthermore, the intensity of the 1.54mm peak was found to depend strongly on the size of the incorporated nc-Si. © 1998 American Institute of Physics. @S0021-8979 ~98!06320-8#