Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes
Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes
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DOI：
10.7567/jjap.55.1202bb
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发表时间：
2016-12-01
影响因子：
1.5
通讯作者：
Ueda, Osamu
中科院分区：
文献类型：
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作者：
Kasu, Makoto;Hanada, Kenji;Ueda, Osamu
我们在（010）β-Ga 2 O3单晶的整个表面上制作了肖特基势垒二极管（SBD），并研究了正向和反向漏电流。随后，我们研究了整个表面上的位错和空洞蚀坑的分布。表面位错蚀坑密度在< 1 × 10 ~（3）~ 6 × 10 ~（4）之间，平均为1.1 × 10 ~（4）cm ~（-2）。表面上的空隙蚀坑密度范围为< 5 × 10（2）至7 × 10（3），其平均值为6 × 10（3）cm（-2）。从SBD漏电流和位错和空洞蚀坑密度之间的比较，我们发现，位错是密切相关的SBD反向漏电流，并不是所有的空洞产生的漏电流。(C)2016日本应用物理学会
We fabricated Schottky barrier diodes (SBDs) on the entire surface of a (010) beta-Ga2O3 single crystal, and investigated the leakage current in both forward and reverse directions. Subsequently, we investigated the distribution of dislocation and void etch pits on the entire surface. The dislocation etch pit density on the surface ranged from < 1 x 10(3) to 6 x 10(4), and its average was 1.1 x 10(4) cm(-2). The void etch pit density on the surface ranged from < 5 x 10(2) to 7 x 10(3), and its average was 6 x 10(3) cm(-2). From a comparison between the SBD leakage current and the dislocation and void etch pit densities, we found that dislocations are closely related to the SBD reverse leakage current, and that not all voids produce the leakage current. (C) 2016 The Japan Society of Applied Physics