Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films
Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films
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DOI：
10.1103/physrevmaterials.5.054406
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发表时间：
2020-08
影响因子：
3.4
通讯作者：
Po-Hao Chang;W. Fang;T. Ozaki;K. Belashchenko
中科院分区：
文献类型：
--
作者：
Po-Hao Chang;W. Fang;T. Ozaki;K. Belashchenko
利用第一性原理计算研究了MgO覆盖的MnPt薄膜的磁各向异性及其电压控制。急剧变化的磁各向异性与膜厚度，特别是在Pt终止的膜，表明它可以通过调整膜厚度广泛调谐。在厚膜的线性电压控制系数为0.17和$-0.07$ pJ/Vm Pt终止和Mn终止的接口，分别，这是可比的Fe$\vert$MgO接口。广泛可调的磁各向异性能量和相当大的电压控制系数的组合表明，MgO覆盖的MnPt膜可以作为一个通用的平台，磁存储器和反铁磁应用。
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is 0.17 and $-0.07$ pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively, which is comparable to the Fe$\vert$MgO interface. The combination of a widely tunable magnetic anisotropy energy and a sizeable voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.