Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
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沉积条件对射频法制备的二氧化钛性能的影响
DOI：
10.1016/j.mssp.2004.09.116
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发表时间：
2004
影响因子：
4.1
通讯作者：
R. Martins
中科院分区：
文献类型：
--
作者：
P. Barquinha;L. Pereira;H. Águas;E. Fortunato;R. Martins
本工作涉及由射频（r.f.）磁控溅射，单独或混合串联结构，如AlyOz膜，利用其高介电常数的优势，为栅极电介质应用提供了有前途的性能。O2/Ar比在0.1至0.15之间的薄膜具有改进的化学计量和密度，其中电阻率超过1011Ωcm，固定电荷密度降低到1012 cm −2以下。沉积压力的影响很大的生长速率，似乎是一个决定性的因素支配的薄膜性能。
This work refers to the electro-optical and structural characteristics of titanium oxide (TiOx) thin films produced by radio frequency (r.f.) magnetron sputtering that present promising performances for gate dielectric applications, alone or in mixed tandem structures, such as with AlyOzfilms, taking advantage of its high dielectric constant. Films produced with a O2/Ar ratio between 0.1 and 0.15 present an improved stochiometry and density where the resistivity overcomes 1011Ωcm and the fixed charge density decreases below 1012cm−2. The deposition pressure influences greatly the growth rate that seems to be a determinant factor dictating the films properties.