Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes
Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes
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溅射金纳米颗粒增强量子点发光二极管
DOI:
10.1088/1674-1056/27/8/086101
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发表时间:
2018
影响因子:
1.7
通讯作者:
Zhong Hai-Zheng
中科院分区:
文献类型:
--
作者:
Perveen Abida;Zhang Xin;Tang Jia-Lun;Han Deng-Bao;Chang Shuai;Deng Luo-Gen;Ji Wen-Yu;Zhong Hai-Zheng
Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes (ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT:PSS/Al). By combining the time-resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles’ incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 × 10−5 cm2/V⋅s to 1.91 × 10−5 cm2/V⋅s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold (from 14600 cd/cm2 to 20720 cd/cm2) and maximum current efficiency is improved by 1.29 fold (from 3.12 cd/A to 4.02 cd/A).