High breakdown voltage GaAs schottky diode for a high efficiency rectifier in microwave power transmission systems
High breakdown voltage GaAs schottky diode for a high efficiency rectifier in microwave power transmission systems
复制标题
用于微波功率传输系统中高效整流器的高击穿电压砷化镓肖特基二极管
DOI：
10.1109/rfit.2015.7377933
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
E. Taniguchi
中科院分区：
文献类型：
--
作者：
Toshiyuki Tanaka;Marika Nakamura;Y. Yamaguchi;M. Tsuru;Yasuki Aihara;Atsushi Yamamoto;Y. Homma;E. Taniguchi
微波无线电力传输系统在输入功率如1W时需要高RF-DC转换效率的整流器。为了满足这一要求，开发了高击穿电压的整流器件。本文介绍了一种高击穿电压砷化镓肖特基势垒二极管（SBD）作为整流器件。所制作的GaAs SBD在2.6×1016 cm-3的低掺杂浓度下，在不使用谐波调谐技术的情况下，在输入功率为27 dBm时实现了23.5 V的击穿电压和77.2%的转换效率，这与仿真结果一致。当采用谐波调谐技术时，采用所制造的GaAs SBD的5.8 GHz频段单并联整流器在模拟中在输入功率为27 dBm时实现了81.7%的转换效率。据我们所知，该转换效率是在 1 W 左右输入功率和 C 频段下的最佳性能。
Microwave wireless power transmission systems require a high RF-DC conversion efficiency rectifier at input power such as 1 W. To meet this requirement, a rectifying device with high breakdown voltage is developed. This paper describes a fabricated high breakdown voltage GaAs Schottky Barrier Diode (SBD) as the rectifying device. The fabricated GaAs SBD at low doping concentration of 2.6×1016 cm-3 achieves breakdown voltage of 23.5 V and the conversion efficiency of 77.2% at input power of 27 dBm under condition without harmonic tuning technique which is agreed with simulation result. When harmonic tuning technique is adopted, a 5.8 GHz-band singleshunt rectifier with the fabricated GaAs SBD achieves the conversion efficiency of 81.7% at input power of 27 dBm in simulation. This conversion efficiency is the best performance at around 1 W input power and C-band to our knowledge.