Electrical activity of the first‐ and second‐order twins and grain boundaries in silicon
Electrical activity of the first‐ and second‐order twins and grain boundaries in silicon
复制标题
硅中一阶和二阶孪晶以及晶界的电活动
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
G. Nouet
中科院分区：
文献类型：
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作者：
A. Bary;G. Nouet
用电子束感生电流和透射电子显微镜研究了多晶硅材料中孪晶的结构和电学性质。一阶和二阶孪晶的电活动与偏析效应及其结构有关，如几何模型所述。
The structural and electrical properties of twins in polycrystalline silicon materials have been investigated by electron‐beam‐induced current and transmission electron microscopy. The electrical activity of the first‐ and second‐order twins is related to segregation effects and to their structure, as described by geometrical models.