Electrochemical behavior of thin Ta3N5 semiconductor film
Electrochemical behavior of thin Ta3N5 semiconductor film
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DOI：
10.1021/jp048802u
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发表时间：
2004-07-29
影响因子：
3.3
通讯作者：
Domen, K
中科院分区：
文献类型：
--
作者：
Ishikawa, A;Takata, T;Domen, K
研究了氮化钽（Ta 3 N5）薄膜作为可见光驱动光电极材料。利用循环伏安曲线和电流-时间曲线研究了材料的光电化学性质，并由光电流电压响应确定了Ta_3N_5的导带和价带边缘。导带和价带的电位被发现是令人满意的H+还原为H-2和氧化的H2O O O-2。与水的氧化相关联的阳极光电流是在可见光照射下获得的，尽管Ta 3 N5本身同时发生氧化。在Fe（CN）（6）（3-）/Fe（CN）（6）（4-）水溶液中，Ta_3N_5薄膜电极在可见光下具有稳定的氧化还原循环性能。
Tantalum nitride (Ta3N5) thin film is investigated as a visible light-driven photoelectrode material. The photoelectrochernical properties of the material are investigated on the basis of cyclic voltammograms and current-time curves, and the conduction and valence band edges of Ta3N5 are determined from the photocurrent voltage response. The potentials of the conduction and valence bands are found to be satisfactory for the reduction of H+ to H-2 and the oxidation of H2O to O-2. Anodic photocurrent associated with the oxidation of water is obtained under visible-light irradiation, although the Ta3N5 itself undergoes simultaneous oxidation. Through sustained photoinduced redox cycling on the Ta3N5 electrode in aqueous Fe(CN)(6)(3-)/Fe(CN)(6)(4-) solution, Ta3N5 thin film is demonstrated to function as a stable electrode for generating electric current under visible light.