On Dealing With the Charge Trapped in Floating- Gate MOS (FGMOS) Transistors
On Dealing With the Charge Trapped in Floating- Gate MOS (FGMOS) Transistors
复制标题
浮栅 MOS (FGMOS) 晶体管中电荷捕获的处理
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
R. Carvajal
中科院分区：
文献类型：
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作者：
E. Rodríguez;M. Jiménez;R. Carvajal
该简介首次提出了唯一的技术的详尽实验结果，该技术具有证明潜力，可以消除浮动门中的残留捕获电荷，而无需进行任何芯片的循环外或装修后处理。简介首先是对过去用于处理费用的不同技术的简要审查（有时将其删除，有时是对其进行编程），以及对此处介绍的设备中使用的指控的描述。通过从100个不同的设备获得的数据证明了后者的有效性，其中50个利用了该技术。结果为FGMOS设备开辟了新的应用程序途径，主要是在低功率和低压设计的背景下，其中已经证明了晶体管的潜力，但是由于被困的被困的不确定性，它的可行性是可疑的。
This brief presents for the first time exhaustive experimental results of the only technique that has proven potential on eliminating residual trapped charge in floating gates without requiring any extra-circuitry or post-fabrication processing of the chip. The brief starts with a brief review of different techniques that have been used in the past to deal with the charge (sometimes to erase it, sometimes to program it) together with a description of the one used in the devices presented here. The validity of the latter is demonstrated with data obtained from 100 different devices, 50 of which make use of the technique. The results open up new application avenues for FGMOS devices, mostly in the context of low-power and low-voltage designs in which the potential of the transistor had already be proven but its feasibility, due to the uncertainty of the trapped charged, was questionable