Delta-Doping Effects on Quantum-Dot Solar Cells
Delta-Doping Effects on Quantum-Dot Solar Cells
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量子点太阳能电池的 Delta 掺杂效应
DOI：
10.1109/jphotov.2014.2316677
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发表时间：
2014
影响因子：
3
通讯作者：
S. Hubbard
中科院分区：
文献类型：
--
作者：
S. Polly;D. Forbes;K. Driscoll;Staffan Hellstrom;S. Hubbard
通过建模和器件实验研究了delta掺杂InAs量子点（QD）增强GaAs太阳能电池的影响。在本研究中使用每个QD两个、四个和八个电子以及每个QD九个空穴的δ掺杂。据观察，QD掺杂减少了QD中的肖克利-里德-霍尔复合，这导致与未掺杂的QD器件相比，暗电流减小并且开路电压改善。与未掺杂样品相比，观察到八电子样品的电压恢复为121 mV。量子点掺杂对亚带隙光子收集没有积极影响，但实际上降低了体和量子点响应，因为通过限制通过量子点区域的少数载流子收集来增加掺杂水平。尽管如此，在保持电流增强的同时，观察到四电子样品相对于未掺杂的QD器件的绝对AM0效率提高了1.41%。
The effects of delta-doping InAs quantum-dot (QD)-enhanced GaAs solar cells were studied both through modeling and device experimentation. Delta doping of two, four, and eight electrons per QD, as well as nine holes per QD, was used in this study. It was observed that QD doping reduced Shockley-Read-Hallrecombination in the QDs, which results in a reduced dark current and an improved open-circuit voltage over undoped QD devices. A voltage recovery of 121 mV was observed for the eight-electron sample compared with the undoped sample. QD doping had no positive effects on subbandgap photon collection but actually degraded bulk and QD response as doping levels were increased by limiting minority carrier collection through the QD region. Despite this, an absolute AM0 efficiency improvement of 1.41% was observed for the four-electron sample over the undoped QD device while maintaining a current enhancement.