Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface
Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface
复制标题
通过将 P 型 MoSe2:Nb 应用于背电极界面,自组织背表面场可提高 Cu2ZnSn(S,Se)(4) 太阳能电池的性能
DOI:
10.1021/acsami.9b08946
复制
发表时间:
2019
影响因子:
9.5
通讯作者:
Zhao Haifeng
中科院分区:
文献类型:
--
作者:
Song Yanping;Yao Bin;Li Yongfeng;Ding Zhanhui;Sun Huanhuan;Zhang Zhenzhong;Zhang Ligong;Zhao Haifeng
Cu2ZnSn(S,Se)4(CZTSSe) thin-film solar cells have been encountering a bottleneck period since the champion power conversion efficiency (PCE) of 12.7% was achieved by Kim et al. in 2014. One of the critical factors that impede its further development is the relatively low open-circuit voltage (VOC) caused by serious interface carrier recombination. In this regard, back surface field (BSF) employment is a feasible strategy to address theVOCissue of CZTSSe solar cells to some extent. Here, we demonstrated a self-organized BSF introduced by prompting interfacial MoSe2layer transition from inherent n-type to desirable p-type with Nb doping (p-MoSe2:Nb). The BSF application can significantly reduce the carrier recombination at the back electrode interface (BEI) and lower down the back contact barrier height. The PCE of the corresponding cell was improved from 4.72 to 7.15% because of the enhancement ofVOCand fill factor, primarily stemming from the doubling aspects of increased shunt resistance (RSh), decreased series resistance (RS), and alleviative recombination velocity of the BEI induced by the BSF. Our results suggest that introducing a BSF fulfilled with p-MoSe2:Nb is a facile and promising route to improve the performance of CZTSSe thin-film solar cells.