Room temperature single electron charging in single silicon nanochains
Room temperature single electron charging in single silicon nanochains
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DOI：
10.1063/1.2887988
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发表时间：
2008-03
影响因子：
3.2
通讯作者：
M. Rafiq;Z. Durrani;H. Mizuta;A. Colli;P. Servati;A. Ferrari;W. Milne;S. Oda
中科院分区：
文献类型：
--
作者：
M. Rafiq;Z. Durrani;H. Mizuta;A. Colli;P. Servati;A. Ferrari;W. Milne;S. Oda
在室温下，单硅纳米链中观察到了单电子荷电效应。由SiO固体源热蒸发生长的纳米链由一系列直径为10 nm的Si纳米晶∼组成，由SiO_2区域隔开。在使用单一、选择的纳米链的器件中，在300K下观察到了多阶库仑阶梯的电流-电压特性。利用纳米链形成多隧道结的模型研究了这些特性。在300K时，纳米晶体在多隧道结中的单电子充电能为Ec=e2/2Ceff∼0.32 eV，∼12kBT。
Single-electron charging effects are observed at room temperature in single Si nanochains. The nanochains, grown by thermal evaporation of SiO solid sources, consist of a series of Si nanocrystals ∼10nm in diameter, separated by SiO2 regions. Multiple step Coulomb staircase current-voltage characteristics are observed at 300K in devices using single, selected, nanochains. The characteristics are investigated using a model where the nanochain forms a multiple tunnel junction. The single-electron charging energy for a nanocrystal within the multiple-tunnel junction is EC=e2∕2Ceff∼0.32eV, ∼12kBT at 300K.