1.55μm emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
1.55μm emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
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DOI：
10.1063/1.2337163
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发表时间：
2006-08
影响因子：
4
通讯作者：
D. Guimard;S. Tsukamoto;M. Nishioka;Y. Arakawa
中科院分区：
文献类型：
--
作者：
D. Guimard;S. Tsukamoto;M. Nishioka;Y. Arakawa
报道了一种用金属有机化学气相淀积法在GaAs衬底上生长的InAs量子点（QDs）发射波长红移的制备技术。通过在InAs量子点生长过程中引入一个锑辐照步骤，作者在室温下获得了In0.24Ga0.76As应变减小层（SRL）覆盖的InAs ScinGaAs量子点在1.55μm（及以上）的基态发射。在室温下，光致发光强度明显增强（×100），而无Sb的量子点在更高In含量的SRL下，基态发射在波长小于1.51μm时达到饱和。
The authors report a fabrication technique for redshifting the emission wavelength of InAs quantum dots (QDs) grown on GaAs substrate by metal organic chemical vapor deposition. By introducing an antimony irradiation step during the InAs QD growth, the authors have achieved ground-state emission at 1.55μm (and beyond) from InAs∕GaAs QDs capped by an In0.24Ga0.76As strain-reducing layer (SRL) at room temperature (RT). Photoluminescence intensity is strongly enhanced (×100) at RT compared to Sb-free QDs capped by a higher In-content SRL in which ground-state emission saturates at wavelengths shorter than 1.51μm.