Crystal structure and microwave dielectric properties of MgZr1−xSnxNb2O8 ceramics
Crystal structure and microwave dielectric properties of MgZr1−xSnxNb2O8 ceramics
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DOI：
10.1016/j.ceramint.2017.10.016
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发表时间：
2018
影响因子：
5.2
通讯作者：
M. Xiao;J. Lou;Yanshuang Wei;Ping Zhang
中科院分区：
文献类型：
--
作者：
M. Xiao;J. Lou;Yanshuang Wei;Ping Zhang
采用传统固相法首次合成了纯相MgZr 1 − xSnxNb 2 O 8（x = 0，0.1，0.15，0.2，0.25和0.3）陶瓷。计算了MgZr 1 − xSnxNb 2 O 8陶瓷的理论介电极化率、填充分数和键价，研究了晶体结构与微波介电性能之间的关系.少量Sn 4+取代Zr 4+有效地提高了品质因数，但过量取代不利于Q × f值的提高。在1260 °C下烧结的MgZr 1 − xSnxNb 2 O 8（x = 0.15）陶瓷具有优良的微波介电性能，εr= 24.91，Q ×f= 94，014.2 GHz，τf= −43.93 ppm/°C。
Pure phase MgZr1−xSnxNb2O8(x = 0, 0.1, 0.15, 0.2, 0.25 and 0.3) ceramics were first synthesized through conventional solid-state method. The theoretical dielectric polarizabilities, packing fractions and bond valences of MgZr1−xSnxNb2O8ceramics were calculated in order to investigate the correlation between the crystal structure and microwave dielectric properties. A small amount of Sn4+substituted for Zr4+effectively improved the quality factor, but excessive substitution is not conducive to the improvement ofQ×fvalue. Excellent microwave dielectric properties ofεr= 24.91,Q×f= 94,014.2 GHz,τf= −43.93 ppm/°C were obtained for the MgZr1−xSnxNb2O8ceramics with x = 0.15 sintered at 1260 °C.