Anisotropy of the critical current density in epitaxial YBa2Cu3Ox films.
Anisotropy of the critical current density in epitaxial YBa2Cu3Ox films.
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DOI：
10.1103/physrevlett.64.479
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发表时间：
1990-01
影响因子：
8.6
通讯作者：
Roas;Schultz;Saemann-Ischenko
中科院分区：
文献类型：
--
作者：
Roas;Schultz;Saemann-Ischenko
The critical current density ${\mathrm{j}}_{\mathrm{c}}$(B,T,\ensuremath{\theta}) of epitaxial, c-axis-oriented ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{\mathrm{x}}$ films was measured between 4.2 and 77 K in magnetic fields up to 8 T as a function of the field direction \ensuremath{\theta}. Strongly enhanced critical currents are observed when the flux lines are aligned along the CuO planes, but there is also a maximum in ${\mathrm{j}}_{\mathrm{c}}$ when the magnetic field is adjusted parallel to the c axis. We relate these effects to an intrinsic pinning between CuO layers, an anisotropy of the shear modulus ${\mathrm{c}}_{66}$, and pinning effects of twin boundaries or stacking faults perpendicular to the film plane, respectively.
