Shifts in the flatband voltage of metal‐oxide‐silicon structure due to iodine in SiO2
Shifts in the flatband voltage of metal‐oxide‐silicon structure due to iodine in SiO2
复制标题
SiO2 中碘引起的金属氧化物硅结构平带电压的变化
DOI：
10.1063/1.96935
复制
发表时间：
1986
影响因子：
4
通讯作者：
G. Sai
中科院分区：
文献类型：
--
作者：
L. Krusin;G. Sai
我们报告了由于氧化物中存在碘而导致的金属氧化物硅结构的平带电压的正位移。在热处理循环后，正位移保持稳定，这对于超大规模集成以及在温度-电压应力下是典型的。这种平带的行为是通过直接注入碘到二氧化硅和随后的退火在惰性气氛中。相比之下，如果Si首先注入碘，然后氧化，所产生的平带位移是稳定的，但负的。两个极性的位移发生在没有显着增加的界面态密度。在每种情况下，它们与氧化物中碘的存在相关，如通过二次离子质谱法测定的。
We report the observation of positive shifts in the flatband voltage of metal‐oxide‐silicon structure as a consequence of iodine presence in the oxide. The positive shifts remain stable after thermal processing cycles, typical to very large scale integration, as well as under temperature‐voltage stress. This flatband behavior is obtained by direct implantation of iodine into SiO2 and subsequent anneal in the inert ambient. In contrast, if Si is first implanted with iodine and then oxidized, the resulting flatband shifts are stable, but negative. The shifts of both polarities occur without significant increase in the interface state density. In each case, they are correlated with the presence of iodine in the oxide as determined by secondary ion mass spectrometry.