Realization of Ultraflat Plastic Film using Dressed-Photon–Phonon-Assisted Selective Etching of Nanoscale Structures
Realization of Ultraflat Plastic Film using Dressed-Photon–Phonon-Assisted Selective Etching of Nanoscale Structures
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使用纳米级结构的修饰光子-声子辅助选择性蚀刻实现超平塑料薄膜
DOI：
10.1155/2015/701802
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and Motoichi Ohtsu
中科院分区：
文献类型：
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作者：
Takashi Yatsui;Wataru Nomura;and Motoichi Ohtsu
我们比较了修饰光子声子(DPP)刻蚀和传统的光化学刻蚀，并通过对所得刻蚀的聚甲基丙烯酸甲酯(PMMA)衬底的形貌图像的数值分析，确定了与传统的光化学刻蚀相比，DPP刻蚀导致了较小尺度结构的选择性刻蚀。我们研究了用O2气体刻蚀PMMA衬底的波长依赖性。当O2的离解能为5.12 eV时，我们采用连续波He-Cd激光器(λ=325 nm，3.81 eV)进行DPP刻蚀，采用五次倍频的Nd：YAG光化学刻蚀(λ=213 nm，5.82 eV)。从获得的原子力显微镜图像中，我们证实了两种情况下表面粗糙度Ra的减少。然而，基于对高度差函数的标准差的计算，我们证实了传统的光化学刻蚀方法只刻蚀了较大尺寸的结构，而DPP刻蚀工艺选择性地刻蚀了较小尺寸的特征。
We compared dressed‐photon‐phonon (DPP) etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA) substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2gas. As the dissociation energy of O2is 5.12 eV, we applied a continuous‐wave (CW) He‐Cd laser (λ=325 nm, 3.81 eV) for the DPP etching and a 5th‐harmonic Nd:YAG laser (λ=213 nm, 5.82 eV) for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness,Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.