The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor
The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor
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第一个晶圆熔合 AlGaAs-GaAs-GaN 异质结双极晶体管
DOI：
10.1557/proc-743-l12.10
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
E. Hu
中科院分区：
文献类型：
--
作者：
S. Estrada;A. Stonas;Andrew Huntington;H. Xing;L. Coldren;S. Denbaars;U. Mishra;E. Hu
我们描述了使用晶片熔融形成异质结双极晶体管（HBT），与AlGaAs-GaAs发射极-基极熔融到GaN集电极。通过这种方式，我们希望利用GaN的高击穿电压和技术上更成熟的GaAs基材料的高迁移率。本文报道了第一个直流器件特性的晶圆熔融晶体管，并证明了潜在的晶圆熔融形成电子活性，晶格失配异质结。器件采用厚基极（0.15 μ m），在约100 A/cm 2的输出电流密度下表现出有限的共发射极电流增益（0.20.5）。器件工作电压为大于20 V的VCE，且VCE偏移较低（1V）。器件结构和晶片熔化条件的改进应提供HBT性能的进一步改进。将HBT在750 ° C下晶片熔融1小时。晶片熔合pGaAs/n-GaN二极管的电流-电压特性表明，熔合温度可以降低到500 oC。这种工艺温度的降低应减轻未来HBT中的有害扩散效应。
We describe the use of wafer fusion to form a heterojunction bipolar transistor (HBT), with an AlGaAs-GaAs emitter-base fused to a GaN collector. In this way, we hope to make use of both the high breakdown voltage of the GaN and the high mobility of the technologically more mature GaAs-based materials. This paper reports the first dc device characteristics of a wafer-fused transistor, and demonstrates the potential of wafer fusion for forming electronically active, lattice-mismatched heterojunctions. Devices utilized a thick base (0.15um) and exhibited limited common-emitter current gain (0.20.5) at an output current density of ~100A/cm 2 . Devices were operated to VCE greater than 20V, with a low VCE offset (1V). Improvements in both device structure and wafer fusion conditions should provide further improvements in HBT performance. The HBT was wafer-fused at 750 o C for one hour. Current-voltage characteristics of wafer-fused pGaAs/n-GaN diodes suggest that the fusion temperature could be reduced to 500 o C. Such a reduction in process temperature should mitigate detrimental diffusion effects in future HBTs.