Deterministic loading of a single strontium ion into a surface electrode trap using pulsed laser ablation
Deterministic loading of a single strontium ion into a surface electrode trap using pulsed laser ablation
复制标题
使用脉冲激光烧蚀将单个锶离子确定性加载到表面电极陷阱中
DOI：
10.1088/2399-6528/ac4b4a
复制
发表时间：
2022
影响因子：
1.2
通讯作者：
Noguchi Atsushi
中科院分区：
文献类型：
--
作者：
Osada Alto;Noguchi Atsushi
几十年来，囚禁离子量子技术已经发展到精密测量、量子通信和量子计算等应用领域。离子陷阱中离子振荡运动的相干操控对于离子的量子信息处理具有重要意义，然而，电场起伏环境引起的不必要的退相干往往阻碍了稳定和高保真的操作。避免这种情况的一种方法是采用脉冲激光烧蚀离子负载，这是一种显著减少污染和热量产生的加载方法。尽管烧蚀负载具有与低温环境相容等优点，但在实际应用中，负载离子数目的随机性仍然是一个问题，在实际应用中，一定数量的离子最好以高概率负载。在这篇文章中，我们展示了一种有效地将单个锶离子负载到表面电极陷阱中的方法，该陷阱是由激光烧蚀和连续光电离产生的。单离子加载到表面电极陷阱的概率被测量为82%，这种确定性的单离子加载允许逐个地将离子加载到陷阱中。我们的结果为通过清洁、稳定和确定的离子负载来开发更多功能更强的离子陷阱量子器件开辟了一条道路。
Trapped-ion quantum technologies have been developed for decades toward applications such as precision measurement, quantum communication and quantum computation. Coherent manipulation of ions' oscillatory motions in an ion trap is important for quantum information processing by ions, however, unwanted decoherence caused by fluctuating electric-field environment often hinders stable and high-fidelity operations. One way to avoid this is to adopt pulsed laser ablation for ion loading, a loading method with significantly reduced pollution and heat production. Despite the usefulness of the ablation loading such as the compatibility with cryogenic environment, randomness of the number of loaded ions is still problematic in realistic applications where definite number of ions are preferably loaded with high probability. In this paper, we demonstrate an efficient loading of a single strontium ion into a surface electrode trap generated by laser ablation and successive photoionization. The probability of single-ion loading into a surface electrode trap is measured to be 82%, and such a deterministic single-ion loading allows for loading ions into the trap one-by-one. Our results open up a way to develop more functional ion-trap quantum devices by the clean, stable, and deterministic ion loading.