Eleven Nanometer Alignment Precision of a Plasmonic Nanoantenna with a Self-Assembled GaAs Quantum Dot
Eleven Nanometer Alignment Precision of a Plasmonic Nanoantenna with a Self-Assembled GaAs Quantum Dot
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DOI：
10.1021/nl403730q
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发表时间：
2014-01-01
期刊：
影响因子：
10.8
通讯作者：
Lippitz, Markus
中科院分区：
文献类型：
--
作者：
Pfeiffer, Markus;Lindfors, Klas;Lippitz, Markus
等离子体提供了调整光与单个量子发射器的相互作用的机会。然而，等离子体激元的强场局部化需要远远超出其他纳米光子技术所需的空间制造精度。此外，这种精度必须在不同的制造工艺中实现，以将联合收割机量子发射器和等离子体激元组合。我们展示了一个解决这个关键问题的控制定位的等离子体纳米天线的精度为11纳米旁边的单个自组装GaAs半导体量子点，其位置可以确定与纳米精度。这些点不像胶体纳米晶体那样遭受闪烁或漂白或跃迁偶极矩的随机取向。我们的方法介绍了灵活的任意纳米结构耦合到单光子源的可控和可扩展的方式制造。
Plasmonics offers the opportunity of tailoring the interaction of light with single quantum emitters. However, the strong field localization of plasmons requires spatial fabrication accuracy far beyond what is required for other nanophotonic technologies. Furthermore, this accuracy has to be achieved across different fabrication processes to combine quantum emitters and plasmonics. We demonstrate a solution to this critical problem by controlled positioning of plasmonic nanoantennas with an accuracy of 11 nm next to single self-assembled GaAs semiconductor quantum dots, whose position can be determined with nanometer precision. These dots do not suffer from blinking or bleaching or from random orientation of the transition dipole moment as colloidal nanocrystals do. Our method introduces flexible fabrication of arbitrary nanostructures coupled to single-photon sources in a controllable and scalable fashion.