Temperature Effects and Optical Emission Spectroscopy Studies of Hydrogen-Based Plasma Etching of Copper
Temperature Effects and Optical Emission Spectroscopy Studies of Hydrogen-Based Plasma Etching of Copper
复制标题
铜氢基等离子体蚀刻的温度影响和发射光谱研究
DOI：
10.1149/2.015202jes
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发表时间：
2011
影响因子：
3.9
通讯作者：
D. Hess
中科院分区：
文献类型：
--
作者：
Fang;G. Levitin;D. Hess
已经对基于氢 (H 2) 等离子体的铜蚀刻工艺进行了光学发射光谱 (OES) 和衬底温度变化研究。温度在- 150 C 和100 C 之间变化。在H 2 等离子体蚀刻工艺期间检测到气相Cu发射。 Cu 蚀刻速率和 Cu 发射强度趋势之间作为温度函数的相关性表明，Cu 去除机制在研究的温度范围内发生变化。氢-铜相互作用化学在蚀刻过程中起着至关重要的作用，这表明氢化铜可能是蚀刻产物。
Optical emission spectroscopy (OES) and substrate temperature variation studies have been performed on Cu etch processes based on hydrogen (H 2) plasmas. Temperature was varied between− 150 C and 100 C. Gas phase Cu emission was detected during the H 2 plasma etch processes. The correlation between Cu etch rate and Cu emission intensity trends as a function of temperature suggests that the Cu removal mechanism changes over the temperature range investigated. The hydrogen-Cu interaction chemistry plays a critical role in the etch process, suggesting that copper hydrides are likely etch products.