Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light
Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light
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DOI：
10.4028/www.scientific.net/msf.924.449
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发表时间：
2018-06
期刊：
影响因子：
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通讯作者：
Yifan Jia;Hongliang Lv;Xiaoyan Tang;Qingwen Song;Yi Men Zhang;Yu -Ming Zhang
中科院分区：
文献类型：
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作者：
Yifan Jia;Hongliang Lv;Xiaoyan Tang;Qingwen Song;Yi Men Zhang;Yu -Ming Zhang
本文系统地研究了氮氧化物（NO）钝化前后n型4 H-SiC MOS电容中近界面电子和空穴陷阱的特性。利用紫外光（UVL）辐照前后偏置应力（BS）引起的双向电容-电压（C-V）滞后和平带电压（Vfb）漂移，研究了近界面电子陷阱（NIHAs）和近界面空穴陷阱（NIHTs）的影响。与Ar退火工艺相比，NO钝化能有效降低器件中的NIHTs密度，但会导致器件中NIHTs过多。更糟糕的是，NO退火样品中的部分陷阱空穴不能轻易从NIHT中释放出来，这可能作为正固定电荷引起阈值电压的负移。
The characteristics of near interface electron and hole traps in n-type 4H-SiC MOS capacitors with and without nitric oxide (NO) passivation have been systematically investigated. The hysteresis of the bidirectional capacitance-voltage (C-V) and the shift of flat band voltage (Vfb) caused by bias stress (BS) with and without ultraviolet light (UVL) irradiation are used for studying the influence of near interface electron traps (NIETs) and near interface hole traps (NIHTs). Compared with Ar annealed process, NO passivation can effectively reduce the density of NIETs, but induce excess NIHTs in the SiC MOS devices. What’s worse is that part of the trapped hole cannot be released easily from the NIHTs in the NO annealed sample, which may act as the positive fixed charge and induce the negative shift of threshold voltage.