Ammonia Chemiresistor Sensor Based on Poly(3-Hexylthiophene) Film Oxidized by Nitrosonium Hexafluorophosphate
Ammonia Chemiresistor Sensor Based on Poly(3-Hexylthiophene) Film Oxidized by Nitrosonium Hexafluorophosphate
复制标题
DOI：
10.1246/cl.2012.1569
复制
发表时间：
2012-12-05
影响因子：
1.6
通讯作者：
Pan, Ge-Bo
中科院分区：
文献类型：
--
作者：
Li, Yan;Liu, Yong-Qiang;Pan, Ge-Bo
以六氟磷酸亚硝基氧化的聚（3-己基噻吩）薄膜为基础，研制了一种氨化学电阻传感器。该传感器对氨反应良好，但对多种有机蒸气不敏感。检出限估计约为0.22 ppm。氨与双极化子之间的氧化还原反应归因于传感器信号。
An ammonia chemiresistor sensor is demonstrated on the basis of a poly(3-hexylthiophene) film oxidized by nitrosonium hexafluorophosphate. The sensor gave a good response to ammonia, but it was insensitive to a variety of organic vapors. The detection limit was estimated to be ca. 0.22 ppm. The redox reaction between ammonia and bipolarons was attributed to the sensor signals.