Zn- Se- Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers
Zn- Se- Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers
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具有亚单层量 Te 的 Zn-Se-Te 多层结构：II 型量子结构和等电子中心
DOI：
10.1103/physrevb.71.045340
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发表时间：
2005
影响因子：
3.7
通讯作者：
M. Tamargo
中科院分区：
文献类型：
--
作者：
Y. Gu;I. Kuskovsky;M. Voort;G. Neumark;X. Zhou;M. Tamargo
光谱和时间分辨的光致发光，光致发光激发，和吸收光谱的详细研究表明，形成II型量子结构quantum dotsd在Zn-Se- Te多层系统与亚单层量的Te。此外，它表明，除了这些量子点，Te等电子中心也存在于同一材料系统中，并有助于光致发光发射。这对于更好地理解多原子系统之间的标度律，例如量子点和少原子系统，等电子中心d.
Detailed studies with spectral and time-resolved photoluminescence, photoluminescence excitation, and absorption spectroscopies show the formation of type-II quantum structures squantum dotsd in a Zn- Se- Te multilayer system with submonolayer quantities of Te. Moreover, it is shown that in addition to these quantum dots, Te isoelectronic centers are also present in the same material system and contribute to the photoluminescence emissions. This could be siginificant for the better understanding of the scaling laws between many-atom systems se.g., quantum dotsd and few-atom systems se.g., isoelectronic centers d.