Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers
Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers
复制标题
具有不对称势垒的磁隧道结中的电可调隧道整流磁阻
DOI：
10.1039/c7nr04431c
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发表时间：
2017
期刊：
影响因子：
6.7
通讯作者：
Mei Liangmo
中科院分区：
文献类型：
--
作者：
Wang Jing;Huang Qikun;Shi Peng;Zhang Kun;Tian Yufeng;Yan Shishen;Chen Yanxue;Liu Guotei;Kang Shishou;Mei Liangmo
多功能自旋电子器件的发展需要同时控制电子的多个自由度，如电荷、自旋和轨道，特别是可以通过在一个特定器件中组合两种或多种不同的物理机制来实现新的物理功能。在这里，我们报告的实现新的隧道整流磁电阻（TRMR），其中电荷相关的整流和自旋相关的隧道磁电阻集成在Co/CoO-ZnO/Co磁性隧道结与非对称隧道势垒。此外，通过同时向器件施加直流电和交流电，TRMR在低温下的调谐范围从-300%至2200%。这种概念验证的调查提供了一个未探索的途径，对电荷和自旋的电和磁控制，这可能适用于其他异质结，以产生更迷人的新兴功能，为未来的自旋电子学应用。
The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO–ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from −300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.