Elastic and plastic properties of In x Ga 1- x As
Elastic and plastic properties of In x Ga 1- x As
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In x Ga 1- x As 的弹塑性
DOI：
10.1088/0022-3727/41/20/205406
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Korte S
中科院分区：
文献类型：
--
作者：
Korte S
研究了生长在（0 0 1）取向GaAs衬底上的In1 − xGaxAs异质外延层的纳米压痕行为。这涵盖了整个组成范围0< x< 1，重点是x< 0.55。以前曾有人提出过流动应力的非线性变化，这里确实发现了最大值x ≥ 0.25。杨氏模量在InAs和GaAs之间近似线性变化。
The nanoindentation behaviour of In 1− x Ga x As heteroepitaxial layers grown onto (0 0 1)-oriented GaAs substrates has been studied. This covers the whole compositional range 0< x< 1, with emphasis on x< 0.55. A non-linear change in flow stress had been suggested before and was indeed found here with a maximum at x∼ 0.25. The Young modulus changes approximately linearly between InAs and GaAs.