Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures
Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures
复制标题
磷在绝缘体上硅结构中的延迟扩散
DOI：
10.1143/jjap.39.l137
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
E. Arai
中科院分区：
文献类型：
--
作者：
H. Uchida;Y. Ieki;M. Ichimura;E. Arai
将绝缘体上硅 (SOI) 结构中的磷扩散曲线与体硅中的磷扩散曲线进行比较。磷扩散在 900 和 1000°C 下进行，使用旋涂玻璃源，能够实现接近固溶度的高表面浓度。扩散方法包括氮气环境中的预沉积扩散和短时间预沉积后在氮气或氧气环境中的驱入扩散。结果表明，与体硅相比，SOI 结构中的预沉积扩散在 900°C 时延迟，而在 1000°C 时则不然。有源层越薄、扩散时间越长的SOI结构，扩散延迟表现得越明显。在 900°C 的驱入扩散中，在 O2 环境中发生延迟，但在 N2 环境中则不发生延迟。这些结果是通过考虑 SOI 结构中 Si/SiO2 界面处过量间隙 Si 的消失来解释的。
Phosphorus diffusion profiles in bonding silicon-on-insulator (SOI) structures are compared with those in bulk Si. Phosphorus diffusion is carried out at 900 and 1000°C, using a spin-on-glass source which enables achievement of a high surface concentration near solid solubility. The diffusion methods consist of both predeposition diffusion in N2 ambient and drive-in diffusion in N2 or O2 ambients following a short time predeposition. Results show that predeposition diffusion in the SOI structures is retarded at 900°C as compared with that in bulk Si, while it is not at 1000°C. The diffusion retardation appears more clearly for the SOI structure with a thinner active layer and longer diffusion time. In the drive-in diffusion at 900°C, retardation occurs in O2 ambient, but not in N2 ambient. These results are explained by considering the extinction of excess interstitial Si at the Si/SiO2 interface in the SOI structure.