CMOS Alcohol Sensor Employing ZnO Nanowire Sensing Films
CMOS Alcohol Sensor Employing ZnO Nanowire Sensing Films
复制标题
采用 ZnO 纳米线传感薄膜的 CMOS 酒精传感器
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
F. Udrea
中科院分区：
文献类型：
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作者：
S. Santra;S. Z. Ali;P. Guha;P. Hiralal;H. Unalan;S. Dalal;J. Covington;W. Milne;J. Gardner;F. Udrea
本文报道了在绝缘体上硅 (SOI) CMOS 微热板上使用氧化锌纳米线 (ZnO NW) 作为酒精传感器。该器件采用 Cadence 设计，并在 XFAB（德国）采用 1.0μm SOI CMOS 工艺制造。基本的电阻式气体传感器由嵌入超薄膜中的金属微加热器（由铝制成）组成。由顶部金属形成的镀金铝电极用于与传感材料接触。该设计允许高工作温度和低功耗。该膜是通过深度反应离子蚀刻形成的。通过简单且低成本的水热法在 SOI CMOS 衬底上生长 ZnO NW。首先使用金属掩模在芯片上溅射几纳米的 ZnO 种子层，然后将芯片浸入 90°C 的六水硝酸锌和六亚甲基四胺溶液中以生长 ZnO NW。在乙醇 (C2H5OH) 蒸气（1...
This paper reports on the utilization of zinc oxide nanowires (ZnO NWs) on a silicon on insulator (SOI) CMOS micro‐hotplate for use as an alcohol sensor. The device was designed in Cadence and fabricated in a 1.0 μm SOI CMOS process at XFAB (Germany). The basic resistive gas sensor comprises of a metal micro‐heater (made of aluminum) embedded in an ultra‐thin membrane. Gold plated aluminum electrodes, formed of the top metal, are used for contacting with the sensing material. This design allows high operating temperatures with low power consumption. The membrane was formed by using deep reactive ion etching. ZnO NWs were grown on SOI CMOS substrates by a simple and low‐cost hydrothermal method. A few nanometer of ZnO seed layer was first sputtered on the chips, using a metal mask, and then the chips were dipped in a zinc nitrate hexahydrate and hexamethylenetramine solution at 90° C to grow ZnO NWs. The chemical sensitivity of the on‐chip NWs were studied in the presence of ethanol (C2H5OH) vapour (with 1...