Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods
Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods
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用原子力显微镜和光学方法表征 TiO2 薄膜的边界
DOI：
10.1002/sia.1405
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发表时间：
2002
影响因子：
1.7
通讯作者：
P. Pokorný
中科院分区：
文献类型：
--
作者：
D. Franta;I. Ohlídal;P. Klapetek;P. Pokorný
本文研究了在单晶硅衬底上制备的TiO2薄膜的上边界的轻微粗糙度。原子力显微镜（AFM）和基于组合可变角光谱椭圆偏振法和近法线光谱反射法的光学方法用于此目的。它示出，表征这种粗糙度的基本统计量的值相当强烈地依赖于这些膜的厚度的值（它们随着厚度的增加而增加）。解释了AFM和光学方法确定的基本统计参数值之间的差异。它还表明，二氧化钛薄膜表现出的不均匀性表示的复杂的折射率的分布。版权所有© 2002年约翰威利父子有限公司。
In this paper slight roughness of the upper boundaries of TiO2 thin films prepared on substrates formed by single‐crystal silicon is studied. Atomic force microscopy (AFM) and an optical method based on combining variable‐angle spectroscopic ellipsometry and near‐normal spectroscopic reflectometry are used for this purpose. It is shown that the values of the basic statistical quantities characterizing this roughness depend quite strongly on the values of the thicknesses of these films (they increase with increasing thickness). Differences observed between the values of the basic statistical parameters determined by AFM and the optical method are explained. It is also shown that the TiO2 films exhibit an inhomogeneity represented by a profile of the complex refractive index. Copyright © 2002 John Wiley & Sons, Ltd.