Enhanced Optical Kerr Signal of GaAs/ AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers
Enhanced Optical Kerr Signal of GaAs/ AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers
复制标题
应变松弛势垒中嵌入 InAs 量子点的 GaAs/ AlAs 多层腔的增强光学克尔信号
DOI：
10.1143/apex.2.082001
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发表时间：
2009
影响因子：
2.3
通讯作者：
and Toshiro Isu
中科院分区：
文献类型：
--
作者：
Ken Morita;Tomoya Takahashi;Takahiro Kitada;and Toshiro Isu
使用时间分辨光学测量，在包含嵌入应变松弛 InGaAs 势垒层中的自组装 InAs 量子点 (QD) 的 GaAs/AlAs 多层腔中演示了强、超快光学克尔信号。半波长（λ/2）腔层中的谐振InAs量子点的大光学非线性通过强腔效应进一步增强。尽管在λ/2层中只插入了两层InAs量子点，但光克尔信号强度比GaAs λ/2腔大60倍。光学克尔信号的响应时间小于 1 ps，这比 InAs QD 中光学生成载流子的衰减时间 (15 ps) 快得多。
Using time-resolved optical measurements, a strong, ultrafast optical Kerr signal was demonstrated in a GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed InGaAs barrier layers. The large optical nonlinearity of the resonant InAs QDs in the half wavelength (λ/2) cavity layer is further enhanced by the strong cavity effect. Although only two layers of InAs QDs were inserted in the λ/2 layer, the optical Kerr signal intensity was 60 times larger than that of a GaAs λ/2 cavity. The response time of the optical Kerr signal was less than 1 ps, which was much faster than the decay time (15 ps) of optically generated carriers in the InAs QDs.