Spin orientation transition across the single-layer graphene/nickel thin film interface
Spin orientation transition across the single-layer graphene/nickel thin film interface
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DOI：
10.1039/c3tc30872c
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发表时间：
2013-01-01
影响因子：
6.4
通讯作者：
Sakai, Seiji
中科院分区：
文献类型：
--
作者：
Matsumoto, Yoshihiro;Entani, Shiro;Sakai, Seiji
通过采用深度分辨 X 射线吸收和具有原子层分辨率的磁圆二色性光谱，探索了单层石墨烯和 Ni(111) 薄膜之间界面的自旋极化电子结构。深度分辨 Ni L-2,L-3 边缘分析表明，与体区域中的面内方向相比，与界面相邻的 Ni 原子层显示出自旋方向向垂直方向的转变。 C K 边分析揭示了界面处 pi-d 杂化引起的自旋轨道相互作用的增强以及石墨烯 p 带区的面外自旋极化。本研究表明原子层水平的界面设计对于基于石墨烯的自旋电子学的重要性。
The spin-polarized electronic structures across the interface between single-layer graphene and a Ni(111) thin film are explored by employing depth-resolved X-ray absorption and magnetic circular dichroism spectroscopy with atomic layer resolution. The depth-resolved Ni L-2,L-3-edge analysis clarifies that the Ni atomic layers adjacent to the interface show a transition of the spin orientation to the perpendicular one in contrast to the in-plane one in the bulk region. The C K-edge analysis reveals the intensification of the spin-orbit interactions induced by the pi-d hybridization at the interface as well as out-of-plane spin polarization in the p band region of graphene. The present study indicates the importance of the interface design at the atomic layer level for graphene-based spintronics.