Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor
Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor
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DOI：
10.1063/1.3510471
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发表时间：
2010-11-01
影响因子：
4
通讯作者：
Park, Sang-Hee Ko
中科院分区：
文献类型：
--
作者：
Oh, Himchan;Yoon, Sung-Min;Park, Sang-Hee Ko
研究了非晶In-Ga-Zn-O（a-IGZO）薄膜晶体管（TFT）的可见光加速负偏压不稳定性（NBI）。如在以前的工作中所报道的，观察到的刚性转移曲线与场效应迁移率和亚阈值摆动的变化微不足道。另一方面，存在由所产生的子带隙状态引起的电容-电压特性的实质性变化。所产生的状态的建议的性质是电离的氧空位（V（O）（2+））的可见光和负偏压的组合。产生的V（O）（2）+态增强了光照下的NBI，因为增加了深空穴捕获中心。此外，V（O）光激发为稳定的V（O）（2+）在导带中产生过量的自由载流子。增加的载流子密度也增强了a-IGZO TFT的导通电压的负偏移。(C)2010年美国物理学会。[doi：10.1063/1.3510471]
We investigated the visible photon accelerated negative bias instability (NBI) in amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). As reported in previous works, the rigid shift in transfer curves with insignificant changes in field-effect mobility and subthreshold swing was observed. On the other hand, there is substantial change in capacitance-voltage characteristics caused by created subgap states. The suggested nature of created states is the ionized oxygen vacancy (V(O)(2+)) by the combination of visible light and negative bias. The generated V(O)(2)+ states enhance the NBI under illumination as increased deep hole trapping centers. Furthermore, the photoexcitation of V(O) to stable V(O)(2+) yields excess free carriers in conduction band. The increased carrier density also enhances the negative shift in turn-on voltage of a-IGZO TFT. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3510471]