CdS/CdSO4 Nanoflower-Based Photodetector with Enhanced Photoelectric Performances
CdS/CdSO4 Nanoflower-Based Photodetector with Enhanced Photoelectric Performances
复制标题
具有增强光电性能的基于 CdS/CdSO4 纳米花的光电探测器
DOI：
10.1021/acsanm.0c02166
复制
发表时间：
2020-10-23
影响因子：
5.9
通讯作者：
Fang, Xiaosheng
中科院分区：
文献类型：
--
作者：
Li, Ziliang;Davar, Fatemeh;Fang, Xiaosheng
具有独特纳米微结构的材料的有效工程设计为深入探索其潜在的光电现象提供了很多机会。在这里，CdS/CdSO 4花状纳米结构（nanoflower）的微结构和光电特性的一个简单的化学路线和以下的热处理制备进行了研究。当在480 ℃下进行热退火时，获得立方CdS、六方CdS和CdSO 4相的混合组合物。CdS/CdSO_4纳米花的电导率与原始CdS纳米花相比显著增强，提供了优异的光电性能，例如高光电流（类似于0.2 μ A）、光响应速度（t（上升）= 2.8 ms，t（下降）= 14.4 ms）、光响应度（类似于0.3 A/W）和探测率（类似于6 × 10（9）Jones）。电导率增益和实质上高的光响应速度源于改进的结晶度和在纳米花内实现特殊的微结构缺陷景观，丰富了CdS系列材料的光电行为以及在大波长区域中操作的低维光电器件的发展。
Effective engineering of materials with distinctive nanoscale microstructures provides lots of opportunities to explore their underlying photoelectric phenomena deeply. Here, the microstructural and photoelectric characteristics of a CdS/CdSO4 flower-like nanostructure (nanoflower) prepared by a simple chemical route and a following thermal treatment were investigated. A hybrid composition of cubic CdS, hexagonal CdS, and CdSO4 phases was obtained when the thermal annealing was conducted at 480 degrees C. The conductivity of CdS/CdSO4 nanoflowers was significantly enhanced compared with that of pristine CdS nanoflowers, giving excellent photoelectric performances, such as high photocurrent (similar to 0.2 mu A), photoresponse speed (t(rise) = 2.8 ms, t(fall) = 14.4 ms), photoresponsivity (similar to 0.3 A/W), and detectivity (similar to 6 x 10(9) Jones). The conductivity gain and substantially high photoresponse speed originated from the improved crystallinity and the realization of a special microstructural defect landscape within the nanoflowers, enriching the photoelectric behavior of CdS series materials as well as the development of low-dimensional optoelectronic devices operating in a large wavelength region.