Growth, structural, and magnetic properties of iron nitride thin films deposited by dc magnetron sputtering
Growth, structural, and magnetic properties of iron nitride thin films deposited by dc magnetron sputtering
复制标题
DOI：
10.1016/s0169-4332(03)00752-9
复制
发表时间：
2003-12
影响因子：
6.7
通讯作者：
Xin Wang;W. Zheng;H. Tian;Shansheng Yu;W. Xu;S. Meng;Xin He;Jiecai Han;Chang Q. Sun;
中科院分区：
文献类型：
--
作者：
Xin Wang;W. Zheng;H. Tian;Shansheng Yu;W. Xu;S. Meng;Xin He;Jiecai Han;Chang Q. Sun;
采用直流磁控溅射法在玻璃衬底上制备了不同Ar/N2放电条件下的FeN薄膜。利用X射线光电子能谱（XPS）、X射线衍射（XRD）和原子力显微镜（AFM）对薄膜的组成、结构和表面形貌进行了表征。在不同的氮气压力下沉积的薄膜具有不同的结构与不同的氮含量，和表面粗糙度取决于薄膜的生长机制。用超导量子干涉仪测定了薄膜的饱和磁化强度和矫顽力，结果表明，当N2/（Ar+N2）流量比大于等于30%时，薄膜中出现了单相γ″-FeN。当N2/（Ar+N2）流量比小于10%时，薄膜由FeN0.056和γ′-Fe 16 N2的混合相组成，其饱和磁化强度大于α-Fe。当N2/（Ar+N2）流量比为10%时，出现γ′-Fe 4 N和ε-Fe 3 N相，其饱和磁化强度低于α-Fe相。
FeN thin films were deposited on glass substrates by dc magnetron sputtering at different Ar/N2discharges. The composition, structure and the surface morphology of the films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). Films deposited at different nitrogen pressures exhibited different structures with different nitrogen contents, and the surface roughness depended on the mechanism of the film growth. Saturation magnetization and coercivity of all films were determined using superconducting quantum interference device, which showed that if N2/(Ar+N2) flow ratio was equal to or larger than 30% the nonmagnetic single-phase γ″-FeN appeared. If N2/(Ar+N2) flow ratio was less than 10%, the films consisted of the mixed phases of FeN0.056and γ′-Fe16N2, whose saturation magnetizations were larger than that of α-Fe. If N2/(Ar+N2) flow ratio was 10%, the phases of γ′-Fe4N and ε-Fe3N appeared, whose saturation magnetizations were lower than that of α-Fe.