Growth kinetics and crystal structure of semiconductor nanowires
Growth kinetics and crystal structure of semiconductor nanowires
复制标题
DOI：
10.1103/physrevb.78.235301
复制
发表时间：
2008-12-01
影响因子：
3.7
通讯作者：
Glas, F.
中科院分区：
文献类型：
--
作者：
Dubrovskii, V. G.;Sibirev, N. V.;Glas, F.
建立了半导体纳米线生长的理论模型，该模型可以确定形成纳米线的生长条件。得到了纳米线生长速率随半径和生长条件变化的一般表达式，并进行了分析。该模型还描述了纳米线从立方晶相到六方晶相的转变。结果表明，所观察到的晶体结构主要由生长动力学控制。结构图和立方相和六方相形成的概率计算为过饱和度和纳米线半径的函数在合理的范围内的材料参数。相混合和相纯度的域的数值估计和分析。
Theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of nanowires is possible. General expression for the nanowire growth rate as function of its radius and the growth conditions is obtained and analyzed. The model also describes the transformation from cubic to hexagonal crystal phase of nanowires. It is shown that the observed crystal structure is controlled mainly by the growth kinetics. Structural diagrams and probabilities of cubic and hexagonal phase formation are calculated as functions of supersaturation and nanowire radius within the plausible range of material parameters. Numerical estimates for the domains of phase mixing and phase purity are presented and analyzed.