Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers
Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers
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DOI：
10.1063/1.1873035
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发表时间：
2005-04
影响因子：
3.2
通讯作者：
L. Goddard;S. Bank;M. Wistey;H. Yuen;Zhilong Rao;J. Harris
中科院分区：
文献类型：
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作者：
L. Goddard;S. Bank;M. Wistey;H. Yuen;Zhilong Rao;J. Harris
我们提出了依赖于温度的局部Z参数，这反映了占主导地位的复合过程的测量。在室温下，Z随电流从低偏压下的1.2增加到仅为2.0的阈值Zth，表明存在显著量的单分子复合。在高温下，Zth上升到2.5以上。我们计算的激光器的能带图和估计35兆电子伏的带隙重整化阈值通过极化分辨测量激子峰的吸收光谱和拐点的吸收，自发辐射，增益谱。小的有效价带势垒高度为115毫电子伏导致空穴泄漏，由于电子发射和载流子溢出到障碍。这可以解释在升高的温度下Zth的增加以及内量子效率从15 °C的57%降低到75 °C的47%。我们还分析了阈值以下和阈值以上的自发辐射谱和增益谱。斯宾坦...
We present temperature-dependent measurements of the local Z parameter, which reflects the dominant recombination processes. At room temperature, Z increases with current from 1.2 at low bias up to a threshold value, Zth, of only 2.0, demonstrating the existence of significant amounts of monomolecular recombination. At elevated temperatures, Zth rises above 2.5. We calculate the laser’s band diagram and estimate 35 meV of band-gap renormalization at threshold through polarization-resolved measurements of exciton peaks in the absorption spectrum and inflection points of the absorption, spontaneous emission, and gain spectra. The small effective valence-band barrier height of 115 meV leads to hole leakage due to thermionic emission and carrier spillover into the barriers. This could explain the increase in Zth at elevated temperatures and decrease in internal quantum efficiency from 57% at 15 °C to 47% at 75 °C. We also analyze the spontaneous emission and gain spectra below and above threshold. The spontan...