Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate 'bond and peel' method
Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate 'bond and peel' method
复制标题
采用聚甲基丙烯酸甲酯“粘合和剥离”方法制造的具有超光滑金属膜的低损耗集成电表面等离子体激元源
DOI：
10.1088/1361-6528/aabb7a
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发表时间：
2018
期刊：
影响因子：
3.5
通讯作者：
Jin Chongjun
中科院分区：
文献类型：
--
作者：
Liu Wenjie;Hu Xiaolong;Zou Qiushun;Wu Shaoying;Jin Chongjun
大多数情况下，使用外部光源来功能化等离子体组件，从而导致体积庞大。电驱动集成等离子体器件将超紧凑的关键特征尺寸与极高的传输速度和低功耗结合在一起，可以将等离子体与当今的电子世界联系起来。为了实现这一前景，抑制等离子体器件中的损耗成为一个紧迫的问题。在这项工作中，我们开发了一种新的聚甲基丙烯酸甲酯“键合和剥离”方法来在半导体晶片上制备具有亚纳米光滑表面的金属薄膜。在此基础上，我们进一步在GaAs基发光二极管晶片上制作了一个包含金属-绝缘体-金属(MIM)波导的小型等离子体源，该波导具有超光滑的金属表面。与含有相对粗糙的金属表面的传统器件相比，SPP模的传播长度增加了2.95倍。数值计算进一步证实，在金属表面完全光滑的MIM光波导上，其传输长度与理论预测相当。这种方法有利于电驱动等离子体器件的低损耗和高集成化，从而为片上集成等离子体电路的实际应用提供了直接的机会。
External light sources are mostly employed to functionalize the plasmonic components, resulting in a bulky footprint. Electrically driven integrated plasmonic devices, combining ultra-compact critical feature sizes with extremely high transmission speeds and low power consumption, can link plasmonics with the present-day electronic world. In an effort to achieve this prospect, suppressing the losses in the plasmonic devices becomes a pressing issue. In this work, we developed a novel polymethyl methacrylate'bond and peel'method to fabricate metal films with sub-nanometer smooth surfaces on semiconductor wafers. Based on this method, we further fabricated a compact plasmonic source containing a metal-insulator-metal (MIM) waveguide with an ultra-smooth metal surface on a GaAs-based light-emitting diode wafer. An increase in propagation length of the SPP mode by a factor of 2.95 was achieved as compared with the conventional device containing a relatively rough metal surface. Numerical calculations further confirmed that the propagation length is comparable to the theoretical prediction on the MIM waveguide with perfectly smooth metal surfaces. This method facilitates low-loss and high-integration of electrically driven plasmonic devices, thus provides an immediate opportunity for the practical application of on-chip integrated plasmonic circuits.