Valley coherent exciton-polaritons in a monolayer semiconductor.
Valley coherent exciton-polaritons in a monolayer semiconductor.
复制标题
DOI:
10.1038/s41467-018-07249-z
复制
发表时间:
2018-11-15
影响因子:
16.6
通讯作者:
Tartakovskii AI
中科院分区:
文献类型:
--
作者:
Dufferwiel S;Lyons TP;Solnyshkov DD;Trichet AAP;Catanzaro A;Withers F;Malpuech G;Smith JM;Novoselov KS;Skolnick MS;Krizhanovskii DN;Tartakovskii AI
Two-dimensional transition metal dichalcogenides (TMDs) provide a unique possibility to generate and read-out excitonic valley coherence using linearly polarized light, opening the way to valley information transfer between distant systems. However, these excitons have short lifetimes (ps) and efficiently lose their valley coherence via the electron-hole exchange interaction. Here, we show that control of these processes can be gained by embedding a monolayer of WSe2 in an optical microcavity, forming part-light-part-matter exciton-polaritons. We demonstrate optical initialization of valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than displayed by bare excitons. We utilize an external magnetic field alongside selective exciton-cavity-mode detuning to control the polariton valley pseudospin vector rotation, which reaches 45° at B = 8 T. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures. The short exciton life time in atomically thin transition metal dichalcogenides poses limitations to efficient control of the valley pseudospin and coherence. Here, the authors manipulate the exciton coherence in a WSe2 monolayer embedded in an optical microcavity in the strong light-matter coupling regime.
登录
查看更多内容
影响因子:
5.5
作者:
Lundt, N.;Nagler, P.;Schneider, C.
通讯作者:
Schneider, C.
影响因子:
10.8
作者:
Schwarz S;Dufferwiel S;Walker PM;Withers F;Trichet AA;Sich M;Li F;Chekhovich EA;Borisenko DN;Kolesnikov NN;Novoselov KS;Skolnick MS;Smith JM;Krizhanovskii DN;Tartakovskii AI
通讯作者:
Tartakovskii AI
影响因子:
19.6
作者:
Srivastava, Ajit;Sidler, Meinrad;Imamoglu, A.
通讯作者:
Imamoglu, A.
影响因子:
38.3
作者:
Jones, Aaron M.;Yu, Hongyi;Xu, Xiaodong
通讯作者:
Xu, Xiaodong
影响因子:
19.6
作者:
Yang, Luyi;Sinitsyn, Nikolai A.;Crooker, Scott A.
通讯作者:
Crooker, Scott A.