High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry
High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry
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DOI：
10.2109/jcersj2.116.994
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发表时间：
2008-09
影响因子：
1.1
通讯作者：
Y. Noguchi;I. Tanabe;Muneyasu Suzuki;M. Miyayama
中科院分区：
文献类型：
--
作者：
Y. Noguchi;I. Tanabe;Muneyasu Suzuki;M. Miyayama
介绍了一种用于生长高质量铋基钙钛矿铁电体单晶的吹氧法，在晶体生长过程中直接向坩埚内通入氧气。实验结果表明，吹氧法可以有效地提高（Bi，Na）TiO 3-BaTiO 3晶体的极化和压电性能，并降低漏电流。这种上级性能的产生是由于非180°畴的重取向减少。从头算结果表明，自发极化与由Bi空位和O空位组成的缺陷偶极子的相互作用是非180°畴重取向的起源。
We present the O2-blowing method for the growth of high-quality single crystals of Bi-based perovskite ferroelectrics, in which O2 gas is directly introduced inside crucibles during crystal growth. The O2-blowing method is demonstrated to be effective for enhancing polarization and piezoelectric properties as well as reducing leakage current for (Bi,Na)TiO3-BaTiO3 crystals. The superior properties are suggested to originate from the reduced reorientation of non-180° domains. Ab initio calculations suggest that the interaction between spontaneous polarization and defect dipole composed of Bi vacancy and O vacancy is the origin of the reorientation of non-180° domains.